toppage | HiSIM Research Center

HiSIM: Hiroshima-University STARC IGFET Model

HiSIM refers to a family of compact models for integrated devices with a MOSFET core. The HiSIM models are based on a complete surface potential description.

What's New

2023/05/29 Started: 2023 International Symposium on Devices, Circuits and Systems (ISDCS 2023)
2023/05/16 HiSIM_SOTB 1.3.0 was released to the public. Available from "HiSIM-Model Downloads" on the left.
2023/05/08 HiSIM_SOI 1.5.0 was released to the public. Available from "HiSIM-Model Downloads" on the left.
2023/04/08 HiSIM2 3.2.0 was released to the public. Available from "HiSIM-Model Downloads" on the left menu.
2023/02/20 HiSIM_HV 2.5.1 was released to the members of Si2/CMC. Open to the public on Aug/9/2024.
2022/08/31 HiSIM_HV 2.4.3 was released to the members of Si2/CMC. Open to the public on Feb/28/2024.
2022/08/31 HiSIM_HV 2.3.4 was released to the members of Si2/CMC. Open to the public on Feb/28/2024.

Overview of the HiSIM Compact Model Family

Four members of the HiSIM family have been selected as international industry standards by the Compact Model Coalition (CMC).
HiSIM_HV (1st standard-version release in January 2009) : High-Voltage MOS-Device Model Standard
HiSIM2 (1st standard-version release in April 2011) : 2nd Generation MOSFET Model Standard

HiSIM_SOI (1st standard-version release in July 2012) : Surface-Potential SOI-MOSFET Model Standard

HiSIM_SOTB (1st standard-version release in December 2014) : Surface-Potential-Based Model Standard for SOI-MOSFET with Thin Silicon and BOX Layers as well as Multi-Gate MOSFETs

Main Links
・ISDCS 2021 (The 4^th International Symposium on Devices, Circuits and Systems)

・NGSPICE (Open Source Circuit Simulator with HiSIM_HV 1.2.4/2.2.0 and HiSIM2 2.8.0 implemented)

Publication

Authors: Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki

Title: "The Physics and Modeling of MOSFETS: Surface-Potential and Modeling HiSIM"

Publisher: World Scientific Pub Co Inc. (2008)