HiSIM Research Center

HiSIM: Hiroshima-University STARC IGFET Model

HiSIM refers to a family of compact models for integrated devices with a MOSFET core. The HiSIM models are based on a complete surface potential description. 

What's New

Overview of the HiSIM Compact Model Family

Four members of the HiSIM family have been selected as international industry standards by the Compact Model Coalition (CMC).
HiSIM_HV  (1st standard-version release in January 2009) : High-Voltage MOS-Device Model Standard
HiSIM2 (1st standard-version release in April 2011) : 2nd Generation MOSFET Model Standard
HiSIM_SOI  (1st standard-version release in July 2012) :  Surface-Potential SOI-MOSFET Model Standard
HiSIM_SOTB  (1st standard-version release in December 2014) :  Surface-Potential-Based Model Standard for SOI-MOSFET with Thin Silicon and BOX Layers as well as Multi-Gate MOSFETs
Main Links
ISDCS 2021 (The 4th International Symposium on Devices, Circuits and Systems) 
NGSPICE (Open Source Circuit Simulator with HiSIM_HV 1.2.4/2.2.0 and HiSIM2 2.8.0 implemented)


 Authors: Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki

 Title: "The Physics and Modeling of MOSFETS: Surface-Potential and Modeling HiSIM"

 Publisher: World Scientific Pub Co Inc. (2008)